ETCO General Electric - 2N167 - Transistor, NPN. Vintage Germanium .
ETCO General Electric - 2N167 Transistor, NPN.
HISTORIC NOTES
General Electric was an industry leader in germanium technology throughout the 1950s. The first GE junction transistors were introduced in late 1953 (PNP alloy junction devices, labeled as 2N43/44/45). Within the next couple of years, GE developed a variety of additional types, including the grown junction 2N167, introduced in 1955. This was a high reliability switching transistor and was used in digital computers and by the military. The 2N167 was one of the first germanium computer transistors available to the industry and found wide spread acceptance for many years. Early solid state Univac computers used 2N167 transistors. The 2N167A was introduced in 1960 as a mechanically “ruggedized” version of the 2N167 (same electrical specs). GE also developed USAF versions of the 2N167 and 2N167A. The 2N167/167A was produced well into the 1960s with likely millions of units sold. The high reliability aspects of this device allowed GE to charge a premium price; $6.45 each in the 1960 Lafayette Radio Semiconductor catalog.
Max voltage: 30V.
Max current: 75mA.
Dissipation: 65mW.
Package: Metal Can.
Note: Vintage difficult Germanium transistor to find.
| SKU | 8378 |
|---|---|
| Condition | NS - NEW SURPLUS |
| Part Number | 2N167 |
ETCO General Electric - 2N167 Transistor, NPN.
HISTORIC NOTES
General Electric was an industry leader in germanium technology throughout the 1950s. The first GE junction transistors were introduced in late 1953 (PNP alloy junction devices, labeled as 2N43/44/45). Within the next couple of years, GE developed a variety of additional types, including the grown junction 2N167, introduced in 1955. This was a high reliability switching transistor and was used in digital computers and by the military. The 2N167 was one of the first germanium computer transistors available to the industry and found wide spread acceptance for many years. Early solid state Univac computers used 2N167 transistors. The 2N167A was introduced in 1960 as a mechanically “ruggedized” version of the 2N167 (same electrical specs). GE also developed USAF versions of the 2N167 and 2N167A. The 2N167/167A was produced well into the 1960s with likely millions of units sold. The high reliability aspects of this device allowed GE to charge a premium price; $6.45 each in the 1960 Lafayette Radio Semiconductor catalog.
Max voltage: 30V.
Max current: 75mA.
Dissipation: 65mW.
Package: Metal Can.
Note: Vintage difficult Germanium transistor to find.
