ST Microelectronics - 2N5179 - Bipolar Transistor, NPN. VHF/UHF Amplifier
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ST Microelectronics - 2N5179 Bipolar Transistor, NPN.
Collector-base Capacitance-Max : 1.0 pF
Collector Current-Max (IC): 0.05 A
Collector-emitter Voltage-Max: 12.0 V
Configuration SINGLE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code: TO-72
JESD-30 Code: O-MBCY-W4
JESD-609 Code: e0
Number of Elements: 1.0
Number of Terminals: 4
Operating Temperature-Max: 200.0 Cel
Package Body Material: METAL
Package Shape: ROUND
Package Style: CYLINDRICAL
Polarity/Channel Type: NPN
Power Dissipation-Max (Abs): 0.2 W
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: WIRE
Terminal Position: BOTTOM
Transistor Application: VHF/UHF AMPLIFIER
Transistor Element Material: SILICON
Transition Frequency-Nom (fT): 1400.0 MHz
Additional Feature: LOW NOIS
Note: Blue, Black or Green test dots.
| SKU | 12351 |
|---|---|
| Condition | NS - NEW SURPLUS |
| Part Number | 2N5179 |
| Alternative Part Number | ECG316, MMBTH10D87Z, MMBTH10L99Z, BF199 |
ST Microelectronics - 2N5179 Bipolar Transistor, NPN.
Collector-base Capacitance-Max : 1.0 pF
Collector Current-Max (IC): 0.05 A
Collector-emitter Voltage-Max: 12.0 V
Configuration SINGLE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
JEDEC-95 Code: TO-72
JESD-30 Code: O-MBCY-W4
JESD-609 Code: e0
Number of Elements: 1.0
Number of Terminals: 4
Operating Temperature-Max: 200.0 Cel
Package Body Material: METAL
Package Shape: ROUND
Package Style: CYLINDRICAL
Polarity/Channel Type: NPN
Power Dissipation-Max (Abs): 0.2 W
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: WIRE
Terminal Position: BOTTOM
Transistor Application: VHF/UHF AMPLIFIER
Transistor Element Material: SILICON
Transition Frequency-Nom (fT): 1400.0 MHz
Additional Feature: LOW NOIS
Note: Blue, Black or Green test dots.
