Motorola - MRF517 - Transistor, NPN. 20VCEO, 35VCBO, 150mA, 2.5 watt @ 25 C, TO-39
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Motorola - MRF517 - Transistor, NPN.
The MRF517 from MOTOROLA manufacturer is a RF Transistors (BJT) with TRANS RF BIPO 2.5W 150MA. The MRF517 is RF Transistor NPN 20V 150mA 4GHz 2.5W Through Hole TO-39 Trans RF BJT NPN 20V 0.15A 3-Pin TO-39 RF Bipolar Transistors Comm/Bipolar Transistor.
Voltage: 20VCEO, 35VCBO.
Max current: 150mA.
Dissipation: 2.5 watt @ 25 Deg C.
Gain: 9dB ~ 10dB
Frequency: 4GHz
Package: TO-39. Gold Leads
New Old Stock
Application: Low noice broadband amplifier; predriver, driver, and output stages. Note: RF & Microwave, VHF/UHF. Silicon, Gpe = 10 dB (typ) @ 60 mA, 300 MHz. 3 GHz Current-Gain Bandwidth Product (min) @ 60mA. Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz.
| SKU | 27720 |
|---|---|
| Condition | NS - NEW SURPLUS |
| Part Number | MRF517 |
Motorola - MRF517 - Transistor, NPN.
The MRF517 from MOTOROLA manufacturer is a RF Transistors (BJT) with TRANS RF BIPO 2.5W 150MA. The MRF517 is RF Transistor NPN 20V 150mA 4GHz 2.5W Through Hole TO-39 Trans RF BJT NPN 20V 0.15A 3-Pin TO-39 RF Bipolar Transistors Comm/Bipolar Transistor.
Voltage: 20VCEO, 35VCBO.
Max current: 150mA.
Dissipation: 2.5 watt @ 25 Deg C.
Gain: 9dB ~ 10dB
Frequency: 4GHz
Package: TO-39. Gold Leads
New Old Stock
Application: Low noice broadband amplifier; predriver, driver, and output stages. Note: RF & Microwave, VHF/UHF. Silicon, Gpe = 10 dB (typ) @ 60 mA, 300 MHz. 3 GHz Current-Gain Bandwidth Product (min) @ 60mA. Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz.
