LTE - 2N2152A - Transistor, PNP Germanium. TO-36

LTE - 2N2152A - Transistor, PNP Germanium. TO-36

PNP germanium alloy power transistor intended as low frequency power switch /amplifier at high temperatures.

Type Designator: 2N2152A

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 170 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 20 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 110 °C

Transition Frequency (ft): 0.1 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Package: TO36

NSN 5961-00-900-0063.