Microsemi - 2N5333 MIL - 5961-00-450-1163 - Transistor, GP BJT PNP 80V 2A 3-Pin TO-5
Microsemi - 2N5333 MIL - 5961-00-450-1163 - Transistor.
Type Designator: 2N5333
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
TO-5
Alternate: DLA900-90-M-FD35
Mil Packaged
| SKU | 20155 |
|---|---|
| Condition | NEW |
| Part Number | 2N5333 MIL, NSN 5961-00-450-1163 |
| Alternative Part Number | DLA900-90-M-FD35 |
Microsemi - 2N5333 MIL - 5961-00-450-1163 - Transistor.
Type Designator: 2N5333
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Package: TO5
TO-5
Alternate: DLA900-90-M-FD35
Mil Packaged
