Transistors

SYNERTEK - MJ12005 - Transistor, NPN.

Status: Discontinued

BJT, 1.5KV V(BR)CEO

Max Voltage: 1500Vcex, 5Vebo.

Max Current: 8Amp.

Dissipation: 100 watt.

Package: TO-3 (TO-204AA) Steel.

Note: Silicon Power Transistors.

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RCA - 2N5496 Transistor, NPN.

Max Voltage: 70V.

Max Current: 1Amp.

Dissipation: 50 watt.

Gain: 0.8MHz.

Package: TO-220.

Genuine Vintage RCA - New Old Stock

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Motorola - 2N2895 - Transistor, NPN.

Status: Discontinued

Max Voltage: 65VCEO, 120VCBO.

Max current: 150mA.

Dissipation: 500mW.

Package: TO-18 Metal, Hermetically Sealed.

Factory new. 

Note: Bipolar.

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Transistor, N Channel BiMos. Max voltage: 1600V. Max current: 33Amp. Package: TO-247AD. P/N: IXBH40N160. Operating temperature: -55 to 150 Deg C. Note: Actually marked/proprietary IXBH1791 instead of IXBH40N160. Learn More

HITACHI - 2SC1942 Transistor, NPN.

Voltage: 800VCEO, 1500VCBO.

Current: 3 Amp.

Dissipation: 50 watt.

Operating temperature: -45 to 150 Deg C.

Package: Hermetically Sealed Heavy TO-3 steel.

Note: High power switching TV horizontal deflection output.

Silicon triple diffused. High Voltage.

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TFK - BU536 - Transistor, NPN.

NPN silicon triple diffused mesa transistor for switching mode power supplies.

Max Voltage: 480VCEO, 1100VCES.

Max Current: 8 Amp.

Dissipation: 62 watt.

Package: TO-3.

Maximum collector power dissipation (Pc), W: 50
Maximum collector-base voltage |Ucb|, V: 1100
Maximum collector-emitter voltage |Uce|, V: 480
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 8
Maksimalna temperatura (Tj), °C: 200
Transition frequency (ft), MHz:
Collector capacitance (Cc), pF:
Forward current transfer ratio (hFE), min: 5.5

Storage Temperature: -65 to 150 Deg C.

Application: Switching Mode Power Supply.

Note: Silicon.

TFK Vishay Telefunken

Alternates: ECG238, SK3710, BU500, BU5027A, BU5027AF, BU5027S, BU505, BU505D, BU505DF, BU505F, BU506, BU506D

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Synertek - DTS401 Transistor, NPN. Vertical Deflection Transistor.

Status: Discontinued

Type: BJT

Max voltage: 300V.

Max current: 2Amp.

Dissipation: 75 watt.

Operating Temperature: 0 to 140 C

Gain: 5MHz.

Package: TO-3 Steel.

Genuine Synertek Vintage DTS401 - New Old Stock.

Note: Silicon. Vertical deflection transistor.

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Transistor, PNP Silicon. Max voltage: 80VCEO. Max current: 4Amp, base current 2Amp. Dissipation: 25 Watt. Package: TO-66 gold. Military P/N: JANTX2N3741. Note: Operating temperature: -65 to 200 Deg C. Learn More

SANYO - 2SC3038 -  Transistor, NPN.

Max Voltage: 400VCEO, 500VCBO.

Max Current: 4 Amp.

Dissipation: 40 watt.

Package: TO-220.

Application: For Switching Regulators.

Note: Silicon, Triple Ddiffused Planar.

Genuine Vintage Sanyo - New Old Stock - Rare

Alternate: NTE51, SK9452

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Raytheon - 2N2270 - Transistor. Silicon NPN.

Status: Discontinued

5W 1A 60V.

High Speed Planar Power Transistor.

Mounted in a Hermetically Sealed Package

TO-5 Long Gold Leads.

NSN 5961-00-890-9768

Genuine Vintage Raytheon 

Alternate: Rockwell Collins 352-0430-000, National Semiconductor NS2915, ECG128, SK3024

Test Dotted

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Motorola - MJ2500 Transistor, PNP.

Max voltage: 60V.

Max current: 10Amp.

Dissipation: 150 watt.

Package: TO-3 steel.

Application: GP amplifier.

Medium power complementary silicon darlington.

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Motorola - MJ13333 - Transistor, NPN

The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as; Switching Regulators, Inverters, Solenoid and Relay Drivers, Motor Controls, and Deflection Circuits.

Type Designator: MJ13333, Material: Si Switchmode, Polarity: NPN

Maximum Collector Power Dissipation (Pc): 175 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): -65 C to 200 °C

Collector Capacitance (Cc): 500 pF

Package: TO-3 Steel

Used/As Removed From Equipment

Difficult to find Vintage Genuine Motorola Power Transistor.  

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Motorola - JAN2N6365 Transistor, PNP. 5961-01-017-0381

Germanium 30v collector to base emitter open and 25 collector to emitter with base short circuited to emitter100.00 max coll current DC 150.0 max total power dissipation. TO-18 gold leads metal can, hermetically sealed.

Made in the USA.

Military NSN 5961-01-017-0381.

MRC      Parameter          Characteristics

ABBH     Inclosure Material            Metal

ABHP     Overall Length   0.170 inches minimum and 0.210 inches maximum

ABJT      Terminal Length               0.500 inches minimum and 0.750 inches maximum

ADAV    Overall Diameter              0.209 inches minimum and 0.230 inches maximum

ALAS      Internal Configuration    Junction contact

ALBA     Electrode Internally-Electrically Connected to Case           Collector

ASCQ     Internal Junction Configuration  PNP

AXGY     Mounting Method           Terminal

AYQS     Terminal Circle Diameter              0.100 inches nominal

CBBL      Features Provided           Hermetically sealed case

CTMZ    III Semiconductor Material           Germanium

CTQN    Voltage Rating in Volts per Characteristic               30.0 maximum breakdown voltage, collector-to-base, emitter open and 25.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter

CTQX     Current Rating per Characteristic               100.00 milliamperes source cutoff current maximum

CTRD     Power Rating per Characteristic 150.0 milliwatts small-signal input power, common-collector preset

TEST       Test Data Document       81349-MIL-S-19500 specification (includes engineering type bulletins, brochures, etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general type data on certain environmental and performance requirements and test conditions that are shown as "typical", "average", "nominal", etc.).

TTQY      Terminal Type and Quantity        3 uninsulated wire lead

ZZZK      Specification/Standard Data        81349-MIL-S-19500/471 government specification

 

 

 

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Motorola - JAN2N3442 Transistor, NPN.

Max voltage: 140VCEO, 160VCBO.

Max current: 10 Amp.

Dissipation: 117 watt.

Package: TO-3.

Operating temperature: -65 to 200 Deg C.

Note: Silicon.

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Linear Integrated Systems - LS313 Transistor, NPN Dual.

Max voltage: 45V.

Max current: 10ma.

Dissipation: 250mW each.

Package: TO-78 Gold Leads (TO-99-6).

Very High Gain >200. Operating junction temperature 150 Deg C.

NSN: 5961-01-317-1936

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IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247AD

Current Rating: 20 A

Drain to Source Breakdown Voltage: 600 V

Drain to Source Resistance: 350 mΩ

Drain to Source Voltage (Vdss): 600 V

Fall Time: 40 ns

Gate to Source Voltage (Vgs): 20 V

Input Capacitance: 4.5 nF

Operating Temperature: -55 °C to 150 °C

Max Power Dissipation: 300 W

Power Dissipation: 300 W

Rds On Max: 350 mΩ  Resistance: 350 mΩ

Rise Time: 43 ns

Turn-Off Delay Time: 70 ns

Voltage Rating (DC): 600 V

RoHS     Compliant

Package: TO-247AD. 

Accessories: Fischer Elektronik - FK 243 MI 247 H, Fischer Elektronik - FK 243 MI 247 O, Fischer Elektronik - SK 145/25 STS-220, Fischer Elektronik - WLK 5

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IR - JANTXV2N6766 - Transistor, N-CH Mosfet.

Max voltage: 200V.

Max current: 30Amp.

Dissipation: 150 watt.

Package: TO-3.

Derate >25 degC: -55 to 150 Deg C.

Military/Aerospace 

 

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FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT. Power Module. Insulated Gate Bipolar.

Half Bridge IGBT Power Module

Max Voltage: 1200V.

Max Current: 75Amp.

V(BR)CES (V)=1.2kV

(BR)GES (V)=20

I(C) Abs.(A) Collector Current=75

Absolute Max. Power Diss. (W)=480

I(CES) Min. (A)=1.0m

I(GES) Max. (A)=15u

V(CE)sat Max.(V)=2.2

t(d)off Max. (s) Off time=950n

t(f) Max. (s) Fall time.=200n

Package: Module (2-Pack Internal).

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fugi Electric- Factory New Old Stock

Made in Japan

 

 

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ONSEMI FAIRCHILD - NDS9948 - Transistor, P Channel FET, Dual.

Drain Source: -60V.

Drain Current: -2.3Amp @ 25 Deg, 1.8Amp @ 70 Deg.

Dissipation: Single operation: 1.6 watt.

Dual Operation: 2 watt.

Package: 8 SOIC SMD.

From: Manufacture new T/R. P/N: NDS9948.

Operating Temperature: -55 to 150 Deg C. 

Note: Enhancement mode.

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Fairchild - 2N3011 Transistor, NPN.

Ultra High Spped Logic Switch

Max voltage: 12V.

Max current: 0.2Amp.

Dissipation: 360mW.

Package: TO-18 hermetically sealed. Gold Leads

Note: Bipolar. Cross NTE123A.

NSN: 5961-00-075-8063 

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Delco/GM 2N278 Transistor, PNP. Germanium

Max Voltage: 45VCEO, 50VCBO.

Max Current: 15 Amp.

Dissipation: 170 watt.

Package: TO-36. P/N: 2N278 House Numbered 5490810.

Note: Germanium, 1MHz.

New Old Stock

Replaces/Alternates/Substitutions: ECG 330, 2N4052, 2N5053, MP4052, MP4053Cross-Reference Search Result (Equivalent Transistors)

Cross-Reference Search Result (Equivalent Transistors)

↓ Type Mat       Struct   Pc          Vcb       Vce       Veb       Ic            Tj           Ft           Hfe        Caps

2N278 Germ       PNP      170        50          30          30          15          100        0.2         35       TO36

2N4052 Germ    PNP      170        60          45          30          50          110        0.24       120       TO36

2N4053 Germ    PNP      170        75          60          40          50          110        0.24       120       TO36

MP4052 Germ   PNP      170        60          45          30          50          110        0.24       120        TO36

MP4053 Germ   PNP      170        75          60          40          50          110        0.24       120        TO36

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AMC - 2N1532 - Transistor, PNP, Germanium, TO3.

Status Discontinued
Case Connection COLLECTOR
Collector Current-Max (IC) 5.0 A
Collector-emitter Voltage-Max 75.0 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20.0
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
Number of Elements 1.0
Number of Terminals 2
Operating Temperature-Max 100.0 Cel
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Transistor Application SWITCHING
Transistor Element Material GERMANIUM
Transition Frequency-Nom (fT) 0.2 MHz

Voltage: 75VCE/100VCBO.

Dissipation: 90 Watt.

Package: TO-3.

Note: Germanium.

Difficult to find Transistor.

Cross/Alternate: NTE121.

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TDK Lambda - L-35-0V-5 - Overvoltage Protector Module, IGBT.

Overvoltage Protection

Range: 6.6V =/-0.2V

Package: Module.

Made in Japan

Typical Applications: Overvoltage Protection used in expensive Voltage Regulated Power Supplies, Standard for 5VDc Power Supplies

NSN 6130-01-115-0946

 

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Transistor, NPN silicon. House numbered 71472D.

The 2N3055 is a silicon NPN Power Transistor intended for general purpose applications. It was introduced in the early 1960s using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. 

2N3055 is also used in audio power amplifiers. The device has good amplifying factor and also the gain is almost linear making 2N3055 one of best solution for power amplifiers. BULK, HOUSE BRANDS.

• Medium power transistor
• Excellent safe operating area
• Complementary NPN - PNP transistors
• Low collector-emitter saturation voltage
• Pb−free packages are available
• DC current gain (hFE) up to 70
• With hfe improved linearity
• Maximum voltage across collector and emitter: 60V DC
• Maximum current allowed trough collector: 15A DC
• Maximum voltage across base and emitter: 7V DC
• Maximum current allowed through base: 7A DC
• Maximum voltage across collector and base: 100V DC
• Operating temperature range: -65ºC to +200ºC
• Total power dissipation: 115W

TO-3, Many Are Test Marked

Equivalents: 2N6673, 2N6675, Complimentary Pair - MJ2955

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