Transistors

Transistors. N Channel Mosfet, 20Amp 450V 230Watt. Case: TO-3 steel.Manufactured by: Advanced Power Technology. Learn More

Transistor, N Channel DS Mosfet. Max voltage: 80V. Package: TO-202AA. Note: 4 Ohm. Learn More

IXYS - IXTH20N60 - Transistor, N Channel MOSFET. 600V, 10A, TO-247AD

Current Rating: 20 A

Drain to Source Breakdown Voltage: 600 V

Drain to Source Resistance: 350 mΩ

Drain to Source Voltage (Vdss): 600 V

Fall Time: 40 ns

Gate to Source Voltage (Vgs): 20 V

Input Capacitance: 4.5 nF

Operating Temperature: -55 °C to 150 °C

Max Power Dissipation: 300 W

Power Dissipation: 300 W

Rds On Max: 350 mΩ  Resistance: 350 mΩ

Rise Time: 43 ns

Turn-Off Delay Time: 70 ns

Voltage Rating (DC): 600 V

RoHS     Compliant

Package: TO-247AD. 

Accessories: Fischer Elektronik - FK 243 MI 247 H, Fischer Elektronik - FK 243 MI 247 O, Fischer Elektronik - SK 145/25 STS-220, Fischer Elektronik - WLK 5

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IR - JANTXV2N6766 - Transistor, N-CH Mosfet.

Max voltage: 200V.

Max current: 30Amp.

Dissipation: 150 watt.

Package: TO-3.

Derate >25 degC: -55 to 150 Deg C.

Military/Aerospace 

 

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Motorola - 2N7002LT1 - Transistor, N-Channel MosFet.

Voltage: 60V.

Current: 115mA.

Dissipation: 625mW.

Package: SOT-23-3 SMD.

Package of 100.

High Discounted when purchased by the reel of 3,000 or quantity of 30X100. 

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SEC Samsung Electronics - IRF540 - Transistor, N Channel MOSFET. 100V, 28A, 85W, TO-220

The IRF540N is an N-Channel Mosfet. This mosfet can drive loads upto 23A and can support peak current upto 110A. It also has a threshold voltage of 4V, which means it can easily driven by low voltages like 5V. Hence it is mostly used with Arduino and other microcontrollers for logic switching. Speed control of motors and Light dimmers are also possible with this Mosfet since it has good switching characteristics.

Status: Discontinued

Max voltage: 100V.

Max current: 28Amp.

Dissipation: 85 watt.

Package: TO-220.

Operating temperature: -55 to 175 Deg C.

Note: Low gate charge StripFet.

RDS on: 0.55 Ohm.

Alternates: RFP30N06, IRFZ44, 2N3055, IRF3205

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International Rectifier - IRFP064 Transistor, N-Channel Power MOSFET.

Voltage: 60V.

Current: 70 Amp.

Dissipation: 300 watt.

RDS on: 0.009 Ohm.

Operating temperature: -55 to 175 Deg C.

Package: TO-247AC.

Note: Hexfet.

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Transistor, N Channel MOSFET. Max voltage: 400V. Max current: 0.4 Amp. Dissipation: 1 watt. Package: 4 Dip. P/N: IRFD310. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon gate. RDS on: 3.6 Ohm. Learn More

Transistor, N CH Mosfet. Max voltage: 60V. Max current: 0.71Amp. Package: SOT-223 SMD (4 Pin = 3 plus tab). P/N: ZVN2106GTA. Learn More

Harris Siliconix - IRF222 - Transistor, N-Channel MOSFET.

Max Voltage: 200V.

Max Current: 4Amp at 25 deg C, 2.5Amp at 100 Deg C.

Dissipation: 150 watt.

Package: TO-3 Steel.

Genuine Siliconix - New Old Stock - Rare

Note: RDS(on) 1.2 Ohm.

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Transistor, N Channel MOSFET. Max voltage: 200V. Max current: 25 Amp. Dissipation: 150 watt. Package: TO-204AE (TO-3) steel. P/N: IRF251. Operating temperature: -55 to 150 Deg C. Note: RDS on: 0.12 Ohm. Learn More

ON SEMICODUCTOR - MTP2955V Transistor, P Channel MOSFET.

 Max voltage: 60V.

Max current: 12Amp.

Package: TO-220.

Operating temperature: -55 to 175 Deg C.

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Motorola - MTM1N95 Transistor, N Channel MOSFET.

Status: Discontinued

Max voltage: 950V.

Max current: 1 Amp.

Dissipation: 75 watt.

Package: TO-3 Steel.

Operating temperature: -65 to 150 Deg C.

Note: Enhancement mode silicon gate.

TMOS power. RDS on: 10 Ohm @ 0.5 Amp.

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Transistor, N Channel MOSFET. Max voltage: 450V. Max current: 7 Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: MTM7N45. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. TMOS power. RDS on: 0.8 Ohm @ 3.5 Amp. Learn More

Motorola - MRF137 - Transistor, N-Channel RF.

Max voltage: 65V.

Dissipation: 30 watt.

Gain: 5 Amp.

Package: SOE flange, test dotted.

Note: N-Channel enhancement mode Mosfet, field effect transistors.

Guaranteed 28V, 150MHz. Power out: 30 watt. Test Dotted

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Transistor, N Channel MOSFET. Max voltage: 80V. Max current: 25 Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: MTM25N08. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. TMOS power. RDS on: 0.075 Ohm @ 12.5 Amp. Learn More

Motorola - 3N170 - Transistor, N Channel MOSFET.

Drain source: 25V.

Drain gate: 35V.

Current: 30mA.

Dissipation: 300mW.

Package: TO-7-4. Gold Leads

Operating temperature: -55 to 150 Deg C.

Genuine Motorola 

Note: Enhancement mode.

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Transistor, N-Channel mosfet. Voltage: 60V. Current: 115mA. Dissipation: 625mW. Package: SOT-23-3 SMD. Package of 100. Learn More

Transistor, N Channel MOSFET. Max voltage: 200V. Max current: 8 Amp. Dissipation: 150 watt. Package: TO-3 steel. P/N: MTM8N20. Operating temperature: -65 to 150 Deg C. Note: Enhancement mode silicon gate. TMOS power. RDS on: 0.4 Ohm @ 4 Amp. Used/Removed from equipment. Learn More

Transistor, N Channel MOSFET. Max voltage: 70V. Max current: 12Amp. Dissipation: 79 watt. Package: TO-220. P/N: IRF533. Operating temperature: -55 to 175 Deg C. Note: Enhancement mode silicon gate. RDS on: 0.23 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 80V. Max current: 75Amp. Package: TO-220AB. P/N: HUF75545P3. Operating temperature: -55 to 175 Deg C. Note: RDS on 0.01 Ohm. UltraFET. Learn More

Transistor, P CH Mosfet. Max voltage: 60V. Max current: 5.1 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR9014. Note: RDS On: 0.5 Ohm.

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Transistor, N Channel Mosfet. Max voltage: 20Vdss. Gate source +/-12V. Max current: 4.2A @ 125 Deg, 3.4A @ 70 Deg. Dissipation: 1.3W. Package: SMD SOT-23. P/N: IRLML2502TR. Note: RDS on: 0.045 Ohm. Learn More

Transistor, N Channel Mosfet. Max voltage: 20Vdss. Gate source +/-12V. Max current: 1.2A @ 125 Deg, 0.95A @ 70 Deg. Dissipation: 540mW. Package: SMD SOT-23. P/N: IRLML2402TR. Note: RDS on: 0.25 Ohm. Learn More