Transistors

Vishay Siliconix - DG191BP - IC.

Precision Dual SPDT Analog JFET Switch.

 75 Ohm.

JAN Qualified

Genuine Siliconix - New Old Stock

Package: 16 CDIP, Gold Leads.

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Vishay Siliconix - 2N5911 - Transistor, N-Channel JFET.

The 2N5911 from VISHAY/SILICONIX/MOTOROLA manufacturer is a IC Chips with Dual N-Channel -25 V 40 mA JFET High Frequency Amplifier. Two Separate FETs within one package.

Status: Discontinued

Gate Source Voltage; -25V.

Dissipation: 500mw.

Drain-Source Current @ Vgs=0: 7ma to 40mA

Package: TO-99 Gold Leads.

Note: Dual High Frequency Amplifier.

Gate-Source Cutoff Voltage Max; Vgs(off):-5V,

Operating Temperature Range: -55C to +150C.

Genuine Siliconix - New Old Stock - Rare

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Philips - 2N4393 Transistor

N Ch JFET.

Voltage: 40V.

RDs on 80 Ohm @ 1mA.

Package: TO-18.

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Transistor, N Channel JFET. Max voltage: 25V. Max current: 30mA. Dissipation: 300mW. Package: TO-72-4 gold leads. P/N: 2N5103. Learn More

Transistor, N Channel JFET. Max voltage: 30V. Max current: 50mA. Dissipation: 225mW. Package: SMD SOT-23. P/N: MMBF4391LT1. Note: Switching. RDS on: 30 Ohm. Package of 20. Learn More

Transistor, N Channel JFET. Max voltage: 30V. Max current: 10mA. Dissipation: 310mw. Package: TO-92 plastic. P/N: 2N5653. Note: Switching. Learn More

TELEDYNE - U1899 - N-Channel JFET Switch

MOSFET 40V 8mA

New Old Stock

TO-18 Gold Leads.

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Transistor, N Channel JFET. Max voltage: -40V. Max current: 10mA. Dissipation: One side 367mW, Both sides 500Mw. Package: TO-99-7 gold leads. P/N: 2N5905. Derate >25 degC: One side 3mw/Deg C, Both sides 4mW/Deg C. Operating temperature: -55 to 150 Deg C. Note: Monolithic dual N CH JFET, general purpose amplifier. Learn More

Vishay Siliconix - 2N4416 - Transistor, N-Channel JFET. N-CH 4-Pin TO-72-4 Gold

Transistor, N-Channel JFET. Lo-Noise UHF/VHF 400Mhz Amp Mixer

Voltage: 35V.

Current: 10mA.

Dissipation: 300mW.

Operating temperature: -65 to 200 Deg C.

Package: TO-72-4 gold leads.

Note: RF.

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Transistor, N Channel JFET. Max voltage: 15VGS, 40VBR. Max current: 40mA IDSS. Package: TO-72-4. P/N: NF5103. Note: Low noise amplifier. Learn More

Transistor, N Channel JFET. Max voltage: -40V. Max current: 10mA. Dissipation: One side 367mW, Both sides 500Mw. Package: TO-99-8 gold leads. P/N: 2N5908. Operating temperature: -55 to 150 Deg C. Note: Monolithic dual N CH JFET, general purpose amplifier. Learn More

National Semiconductor Corp - 2N4861 Transistor, N-Channel-depletion.

Max voltage: 30V.

Max current: 50ma.

Dissipation: 360mw.

Package: TO-18 gold leads.

Note: JFET Switching.

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Transistor, P Channel JFET. Max voltage: 40V. Max current: 10mA. Dissipation: 225mW. Package: SOT-23 SMD. P/N: MMBF5460LT1. Junction and storage temperature: -55 to 150 Deg C. Package of 20. Note: Silicon. Learn More

N-Channel JFETs NEW TO-18 METAL Learn More

Transistor, N CH JFET. Max voltage: 30V. Max current: 10mA. Dissipation: 300mW. Package: TO-72. New. P/N: 2N3823. Note: Cross NTE459. Learn More

Motorola - 2N4861 Transistor, N-Channel-depletion.

Max voltage: 30V.

Max current: 50ma.

Dissipation: 360mw.

Package: TO-18 gold leads.

Note: JFET switching.

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Transistor, N Channel JFET. Voltage: -40V. Current: 10mAdc. Dissipation: 360mW. Operating temperature: -65 to 175 Deg C. Package: TO-18 gold leads. Learn More

Interfet - 2N5911 - Transistor, N-Channel JFET.

The 2N5911 is a IC Chips with Dual N-Channel -25 V 40 mA JFET High Frequency Amplifier. Two Separate FETs within one package.

Status: Discontinued

Gate Source Voltage; -25V.

Dissipation: 500mw.

Drain-Source Current @ Vgs=0: 7ma to 40mA

Package: TO-99.

Note: Dual High Frequency Amplifier.

Gate-Source Cutoff Voltage Max; Vgs(off):-5V,

Operating Temperature Range: -55C to +150C.

New Old Stock - Rare

 

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Transistor, N Channel JFET. Max voltage: VGS off -0.5 to -4V. Gate-Drain, Gate-Source Voltage: 25V. Max current: 50mA. Dissipation: 400mW. Package: TO-226AA (TO-92) plastic. New. P/N: J110. Note: Silicon. RDS On: 18 Ohm. Learn More

Transistor, N Channel JFET. Max voltage: 40V. Max current: 50mA. Dissipation: 400mW. Package: TO-226AA (TO-92) plastic. New. P/N: J113. Note: Silicon. RDS On: 100 Ohm. Cross NTE469. Learn More

Motorola - J177 - Transistor, P Channel FET. Max voltage: 30V. Max current: 50mA. Dissipation: 350mW. Package: TO-92 Plastic Cut and Formed leads. Derate >25 deg C: 3.3mW / Deg C. RDS On: 300 Ohm. Alternate: NTE2938. Please refer to specification sheet for gate source cutoff voltage. Learn More

Transistor, N Channel JFET. Max voltage: VGS Off -4 to -6V. VBR -25V. Max current: 40mA. Dissipation: 400mW. Package: TO-226AA (TO-92) plastic. New. P/N: J211. Learn More

Transistor, P Channel JFET. Max voltage: 20V. Max current: 2-6mA. Dissipation: 300mW. Package: TO-72 cut leads. P/N: ECG460. Note: Cross NTE460. Used/Removed from equipment. . Learn More

IC, operational amplifier. Linear JFET with internal frquency compensation, low noise. Package: 8 SOIC SMD. Learn More