Transistors

Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 75Amp. Package: Module (2-pack). P/N: 2MBI75N060. Application: Inverter for motor drive. AC and DC servo drive. Uninteruptible power supplies. Industrial machines, such as welding machines. More info: www.fujisemicon-elis.com

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Transistor, IGBT. Insulated gate bipolar. Max voltage: 600V. Max current: 200Amp. Package: Module (2-pack). P/N: 2MBI200J-060. Application: High power switching. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

FUJI ELECTRIC - 6MBI25L-120 - Transistor, IGBT. P/N: 6MBI25L-120. Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 25Amp. Package: Module (6-pack) M616. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. Learn More

FUJI ELECTRIC - 2MBI75J-120 - Transistor, IGBT. Power Module. Insulated Gate Bipolar.

Half Bridge IGBT Power Module

Max Voltage: 1200V.

Max Current: 75Amp.

V(BR)CES (V)=1.2kV

(BR)GES (V)=20

I(C) Abs.(A) Collector Current=75

Absolute Max. Power Diss. (W)=480

I(CES) Min. (A)=1.0m

I(GES) Max. (A)=15u

V(CE)sat Max.(V)=2.2

t(d)off Max. (s) Off time=950n

t(f) Max. (s) Fall time.=200n

Package: Module (2-Pack Internal).

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fugi Electric- Factory New Old Stock

Made in Japan

 

 

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Transistor, IGBT, NPN. Max voltage: 600V. Max current: 300Amp. Package: Module. P/N: MG300G1UL1. Note: Silicon, triple diffused. With hardware. Learn More

FUJI ELECTRIC - 7MBR10NE120 -Transistor, IGBT.

Insulated Gate Bipolar.

Max Voltage: 1200V.

Max Current: 10Amp.

Package: Module.

Made in Japan

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

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Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 8Amp. Package: Module (6-pack) M604. P/N: 6MBI8L-120. Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines. More info: www.fujielectric.com Learn More

Fuji Electric - 2MBI100N-120 - Transistor, IGBT. 

IGBT MODULE ( N Series ) N Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply.

Status: Discontinued

Insulated gate Bipolar.

Max voltage: 1200V.

Max current: 100Amp.

Package: Module (2 in one-package). Two Circuits within a single IGBT.  

Application: Inverter for motor drive. AC and DC servo drive. Uninterruptible power supplies. Industrial machines, such as welding machines.

Genuine Fuji Electric - New Old Stock - Bulk Packaged.

Alternate: Reliance Electric 602909-810AW for GV3000

Reliance uses them for their GV3000, and the part number they assign the module is: 602909-810AW. 

Made in Japan

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FUJI ELECTRIC - 2MBI100J-120 - Transistor, IGBT.

Insulated Gate Bipolar.

Low Stauration 

Max Voltage: 1200V.

Max Current: 100Amp.

Temperature: 150C

Mount: Screw

Package: Dual Module, 2 in 1 Pack.

Applications: Industrial Machines, Uninterruptible Power Supplies, Welding Machines, Motor Drive, AC/DC Servo Drivces.

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Toshiba - MG25J1BS11 Transistor, IGBT.

Status: Discontinued

Max voltage: 600V (.6KV).

Max current: 25Amp.

Package: Module with Hardware.

Made in Japan

New Old Stock

 

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MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

MOSFET Type: FREDFET 7

Mount: Chassis Mount, Screw

Number of Contacts: 6

Continuous Drain Current: (ID) 90 A

Drain to Source Voltage: (Vdss) 500 V

Fall Time: 77 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 1.2 nF

Operating Temperature: -40 C to 150 °C

Max Power Dissipation: 694 W

Number of Elements: 4

Power Dissipation: 694 W

Rds On Max: 45 mΩ

Rise Time: 35 ns

Turn-Off Delay Time: 87 ns

Turn-On Delay Time: 18 ns

Approximate Dimensions: See Attached Detailed Diagram

RoHS Compliant

Does not include mounting hardware.

Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

 

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Powerex CM1000HA-25H Power Transistor Module IGBT, 1000 Amp 1200V. Single module.

Collector Emitter Breakdown Voltage: 1.2 kV

Collector Emitter Voltage (VCEO): 3.6 V

Element Configuration: Single

Input: Standard

Input Capacitance: 200 nF

Max Collector Current: 1 kA

Max Power Dissipation: 5.8 kW

Compliance: RoHS Compliant     

Applications: AC motor control. Motion/Servo Control. Uninterruptible power supplies, Welding power supplies. Laser power supplies. Module Case, With Hardware.

 

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Toshiba - MG300M1UK1 Transistor, IGBT.

Max voltage: 1000V (1KV).

Max current: 300Amp.

Package: Module.

Note: Used/Removed from equipment.

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Toshiba - MG25N2CK1 Transistors, IGBT.

25Amp 1100V.

Darlington half bridge power module.

Hardware not included.

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Powerex. - CM200DY-24E Transistor, IGBT.

Max Voltage: 1200V.

Max Current: 200Amp.

Package: Module insulated 2-element.

Application: High power switching use.

AC Drive Inverters.

Servo Controls.

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Transistor, IGBT. 600Amp 1200V. Single module. Application: AC motor control. Motion/Servo control. Uninterruptible power supplies. Welding power supplies. Laser power supplies. Case: Module. With hardware. Learn More

Transistor, IGBT. Max voltage: 1200V. Max current: 300Amp. Package: Module insulated 2-element. P/N: CM300DU24F. Application: High power switching use. AC drive inverters. Servo controls. Used/RFE/removed from equipment. No hardware. Learn More

Powerex. - KS621K40A41 - IGBT, Voltage: 850V, Current: 400Amp.

KS621K40A41
Darlington Independent Power Module - Viso 2.5kV(RMS),3-Stage
Powerex Power Semiconductors
Isolated Case (Y/N)=Yes
Circuits Per Package=1
V(BR)CEO (V)=850
V(BR)CBO (V)=1.0k
I(C) Abs.(A) Collector Current=400
Absolute Max. Power Diss. (W)=1.98k
R(thJC) (¡ãC/W)=63m
h(FE) Min. Static Current Gain=70
@I(C) (A) (Test Condition)=400
@VCE (test)=5.0
V(CE)sat Max.(V)=2.5
@I(C) (A) (Test Condition)=400
@I(B) (A) (Test Condition)=8.0
t(r) Max. (s) Rise time=3.0u
t(f) Max. (s) Fall time.=3.0u

Package: Module, NPN SI Power Transistor

Used/Removed from equipment.

Note. Darlington. No hardware.

NSN: 5961-01-350-7226

Made in Japan

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IGBT. Voltage: 1,000V. Current: 300Amp. Package: Module, Used/Removed from equipment. Note. Darlington. No hardware. Learn More

IGBT. 600V 50 Amp. Module, no hardware. Used/Removed from equipment. Note: Marked 50DY-12H. Learn More

Transistor, IGBT. Insulated gate bipolar. Max voltage: 1200V. Max current: 200Amp. Package: Module insulated 2-element. P/N: CM200DY-24E. Application: High power switching use. AC drive inverters. Servo controls. Learn More

MATSUSHITA - M57962B IGBT GATE DRIVER

12-SIP CERAMIC NEWSPEX ON Page-183

NEWARK #114

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IXYS - IXGT30N60B - Transistor, IGBT, HiPer Fast. Status: Discontinued Transistor, IGBT, HiPerFast. Max voltage: 600V. Max current: 70Amp. Package: TO-268 SMD. Operating temperature: -55 to 150 Deg C. Application: PFC circuits, UPS, AC motor control, DC servo and robot drives and DC choppers. Note: Optimized for 10-25 KHz hard switching and up to 150KHZ resonant switching. Learn More

IR - G4BC30KD Transistor, IGBT.

Status: Discontinued

Insulated gate bipolar.

Max voltage: 600V.

Max current: 16Amp.

8-25 KHz

Package: TO-220.

Note: Ultra-fast soft recovery diode.

Genuine International Rectifier - New Old Stock - Difficult Transistor/IGBT to Find

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