5961-01-261-5373 TO-92 new military tektronix parts MOTOROLANEW MIL IND PKG'D. Learn More

5961-01-171-7410 TO-92 MOTOROLA Learn More

Texas Instruments - 2N1303 Texas Instruments Transistor, PNP. Germanium

Status: Discontinued

Maximum Collector-Base Voltage Vcb 30V

Maximum Collector-Emitter Vce 25V

Maximum Emitter-Base Voltage Veb 25V

Maximum Collector current IC Max 0.3A

Transistion Frequency 1Mhz

 Collector Capacitance 20pF

Forward Current Transfer Ratio (hFE) min 20

Dissipation 0.15 watt

TO5

Gold Leads.

Note: Alloy-junction Germanium.

Alternate: Equivalent  2N1309

 

 

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N-Channel Enhancement-Mode Vertical DMOS FETs60V 0.5A 5-OHM TO-92 Learn More

STC - JANTX2N1486 - Transistor, NPN. Max Voltage: 55VCEO, 100VCBO. Max Current: 3Amp. Dissipation: 1.75 Watt. (25 Watt). Package: TO-8. Operating temperature: 200 Deg C. Note: Silicon. Learn More

Transistors. Mystery. Double marked LL6093. Case: TO-18 all gold. Learn More

Transistor, NPN. Max voltage: 40VCEO, 50VCBO. Max current: 6Amp. Dissipation: 40 watt. Package: TO-66 steel, heatsinked. P/N: 2N6374. Operating temperature: -65 to 200 Deg C. Note: Silicon. Learn More

Transistor, N-Channel FET. Voltage: 30V. Current: 10mA. Dissipation: 200mW. Package: TO-92 plastic. Note: Silicon. Military NSN 5961-01-015-9884. Fluke P/N: J2168 and or 386730. Learn More

Transistor, N-Channel FET. Voltage: 30V. Current: 10mA. Dissipation: 200mW. Package: TO-92 plastic. Note: Silicon. Military NSN 5961-01-015-9884. Fluke P/N: J2168 and or 386730. Learn More

Transistor, N Channel FET. Max voltage: 30V breakdown. 2V threshold. Max current: 10mA current saturation. Package: TO-72 gold. P/N: SD210. Note: Input capacitance 3.5pF. Leads may have a bit of residual foam that deteriorated and was removed. Learn More

Phototransistor, NPN, 860nm. Voltage: 35Vce. Current: 15mA. Dissipation: 165mW. Clear. Package: 3mm LED plastic, 2-Pin T-1. Operating temperature: -40 to 100 Deg C. Note: Silicon. Application: 380nm to 1150nm. Infineon/Siemens. Package of 10. Learn More

Siemens - BF255 Transistor, NPN.

Max voltage: 20VCEO, 30VCES.

Max current: 30mA.

Dissipation: 250mW.

Package: TO-92.

Storage temperature: -65 to 150 Deg C.

Application: RF. For AM and FM stages.

Note: Silicon.

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SEC Samsung Electronics - IRF540 - Transistor, N Channel MOSFET. 100V, 28A, 85W, TO-220

The IRF540N is an N-Channel Mosfet. This mosfet can drive loads upto 23A and can support peak current upto 110A. It also has a threshold voltage of 4V, which means it can easily driven by low voltages like 5V. Hence it is mostly used with Arduino and other microcontrollers for logic switching. Speed control of motors and Light dimmers are also possible with this Mosfet since it has good switching characteristics.

Status: Discontinued

Max voltage: 100V.

Max current: 28Amp.

Dissipation: 85 watt.

Package: TO-220.

Operating temperature: -55 to 175 Deg C.

Note: Low gate charge StripFet.

RDS on: 0.55 Ohm.

Alternates: RFP30N06, IRFZ44, 2N3055, IRF3205

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Transistor. Silicon NPN. 5W 1A 60V. High speed planar power transistor. TO-5 cut 1/4" leads. Learn More

Transistor, NPN. Voltage: 250V. Current: 2Amp. Dissipation: 35 watt. Gain: 40 @ 100 mA @ 10 V. Package: TO-66 steel. Note: Silicon. Military NSN 5961-00-852-2552. High Voltage. Learn More

Transistor, PNP. Voltage: -30V. Current: -500mAdc. Dissipation: 625mW. Operating temperature: -55 to 150 Deg C. Package: TO-92, plastic. Note: Silicon, darlington. Package of 10. Learn More

S - 2N6015 - Transistor , PNP General Purpose Low Noise, TO-92

2N6015 is a silicon PNP low noise transistor preferred for use in general purpose amplifier and switching applications.

Voltage: 60VCEO, 70VCBO.

Current: 800mA.

Dissipation: 500mW.

Frequency: 150MHz

Package: TO-92.

Note: Silicon.

Alternate: NTE193.

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PNP SOT-23 SMD Medium Power Transistor (Switching) 50/tube Learn More

Transistor, Si NPN. Max voltage: 80Vceo, 140Vcbo. Max current: 1Amp. Dissipation: 500mW. Package: TO-18, gold with test dots. Military P/N: JANTX2N3700. Learn More

RCA - 2N3055HOM / 2N3055H Transistor, NPN Silicon.

Over time, RCA changed the structure of the 2N3055 transistors. The first transistors were called hometaxial, and this model is certainly one of them. They were manufactured by simultaneously inversely doping a wafer with a base doping on both sides, thus generating the emitter and collector layers. Then only the base layer had to be etched free for contacting. 

Max Voltage: 60V.

Max Current: 15 Amp collector, 7 Amp base.

Dissipation: 115 Watt.

Package: TO-3 Steel.

Application: Designed for general purpose switching and amplifier applications.

Operating Temperature: -65 to +200 DegC.

RCA - 2N3055HOM is a High Reliability Version "Hometaxial Selected version" of the old standard which often works as compared to earlier versions "E" (Epitaxial).

Genuine Vintage RCA - New Old Stock - Rare

Alternates: ECG130, BDY73

Note: Genuine RCA 2N3055HOM/2N3055H Power Transistors have a reduced bandwidth as compared to the new currently manufactured 2N3055 replacements. Repair shop personnel report 2N3055H transistors perform better in vintage equipment. Few suppliers still have the older RCA 2N3055H transistors. 

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Transistor, NPN. Max voltage: 55VCEO, 100VCBO. Max current: 3Amp. Dissipation: 1.75 Watt. Package: TO-8. P/N: 2N1486. Operating temperature: 200 Deg C. Note: Silicon. Medium power. Learn More

PNP 40W 2N5956 TO-66 W/HTSNK Learn More

RCA - 40372 Transistor.

NPN silicon 55Vceo 4Amp 25 watt, with heat radiator.

Marked 40372.

Case: TO-66 heatsinked.

Military NSN 5961-00-497-9132,

Cross: Fluke 288381. 2N3054

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RCA - 40347 Transistor, NPN.

Max voltage: 40VCEO 60VCBO.

Max current: 1.5Amp.

Dissipation: 1 watt.

Package: TO-39. New.

Note: Silicon. With attached radiator (Heatsink).

Genuine Vintage RCA - New Old Stock

Alternate: NTE186.

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