Transistors

Transistor, IGBT, NPN. Max voltage: 600V. Max current: 300Amp. Package: Module. P/N: MG300G1UL1. Note: Silicon, triple diffused. With hardware. Learn More

Toshiba - MG25J1BS11 Transistor, IGBT.

Status: Discontinued

Max voltage: 600V (.6KV).

Max current: 25Amp.

Package: Module with Hardware.

Made in Japan

New Old Stock

 

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MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

MOSFET Type: FREDFET 7

Mount: Chassis Mount, Screw

Number of Contacts: 6

Continuous Drain Current: (ID) 90 A

Drain to Source Voltage: (Vdss) 500 V

Fall Time: 77 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 1.2 nF

Operating Temperature: -40 C to 150 °C

Max Power Dissipation: 694 W

Number of Elements: 4

Power Dissipation: 694 W

Rds On Max: 45 mΩ

Rise Time: 35 ns

Turn-Off Delay Time: 87 ns

Turn-On Delay Time: 18 ns

Approximate Dimensions: See Attached Detailed Diagram

RoHS Compliant

Does not include mounting hardware.

Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

 

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Toshiba - MG300M1UK1 Transistor, IGBT.

Max voltage: 1000V (1KV).

Max current: 300Amp.

Package: Module.

Note: Used/Removed from equipment.

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Toshiba - MG25N2CK1 Transistors, IGBT.

25Amp 1100V.

Darlington half bridge power module.

Hardware not included.

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Toshiba - 2SD822 - Transistor, NPN.

Max voltage: 600VCEO, 1500VCBO.

Max current: 7Amp.

Dissipation: 50 watt.

Package: TO-3.

Note: Silicon.

High switching speed.

High Voltage.

Genuine Toshiba - New Old Stock - Rare

Alternates: NTE238, ECG165, SK2SD822.

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Transistor, NPN. Max voltage: 600VCEO, 1500VCBO. Max current: 2.5Amp. Dissipation: 50 watt. Package: TO-3. P/N: 2SD818. Note: Silicon. High switching speed. High Voltage. Learn More

Toshiba - 2SD633 Transistor, Silicon NPN.

Max voltage: 100V.

Max current: 7 Amp.

Dissipation: 40 watt.

Package: TO-220.

Note: Triple diffused type (high power switching, hammer drive, pulse motor drive applications).

Compliment: 2SB673

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Transistor, module. Max voltage: 500VCEO, 600VCBO. Max current: 75Amp. Dissipation: 350 watt. P/N: MG75H2DL2. Learn More

Transistor, module. Max voltage: 450VCEO, 600VCBO. Max current: 75Amp. Dissipation: 350 watt. P/N: MG75G2CG1. Learn More

Transistor, IGBT N Channel. Max voltage: 1200V. Max current: 50Amp. Dissipation: 400 watt. Package: Module. P/N: MG50Q2YS40. Note: High speed. Isolated case, each with hardware. New. Learn More

IC, photocoupler. GaAs IRED and photo-transistor. Applications: AC line/digital logic isolator. Telephone line receiver. Twisted pair line receiver. Relay contact monitor. Case: 6-Dip. Package of 50, one manufactures tube. Learn More

Toshiba - MG50G1BL3 - Transistors, IGBT.

50Amp 600V.

Power module.

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Toshiba - 2SD717 - Silicon NPN High Freq Epitaxial Planar Transistor

2 DC-DC CONVERTER AND DC-AC INVERTER APPLICATIONS.

Low Collector Saturation Voltage: VCE (sat)=0.4V (Max.)

TO-3P

Genuine Toshiba - New Old Stock - Rare

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Toshiba - 2SA1012 Transistor, PNP.

Voltage: -50VCEO, -60 VCBO.

Current: -5Amp.

Dissipation: 25 watt.

Storage temperature: -55 to 125 Deg C.

Package: TO-220.

Note: Silicon epitaxial.

Genuine Vintage Toshiba 2SA1012 - New Old Stock

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Transistor, NPN. Max voltage: 30VCEO, 35VCBO. Max current: 50mA. Dissipation: 200mW. Package: TO-92 plastic. P/N: 2SC2669. Application: High frequency amplifier. Note: Silicon epitaxial. Learn More

Transistor, NPN. Max voltage: 30VCEO, 35VCBO. Max current: 800mA. Dissipation: 600mW. Package: Package: TO-92. P/N: 2SC509. Note: Silicon. Learn More

Toshiba - 2SC2562 - Transistor, NPN.

Max voltage: 50VCEO, 60VCBO.

Max current: 5 Amp.

Dissipation: 25 watt.

Package: TO-220AB.

Operating temperature: -55 to 150 Deg C.

Application: High Current Switching.

Note: Silicon Epitaxial.

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Transistor, NPN. Max voltage: 300V. Max current: 0.1 Amp. Dissipation: 6 watt. Package: TO-66. P/N: 2SC515A. Storage temperature: -55 to 150 Deg C. Application: For use in line-operated color TV chroma output circuits and sound output circuits. Note: Silicon. High breakdown voltage. Learn More

Toshiba - TD62503P IC. Bipolar Digital NPN Transistor Array, 7 Single Driver.

IC 200mA, 35V, 7 Channel, NPN, Si, Small Signal.

IR2C30.

Package: 16 Dip.

Note: Silicon monolithic.

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Transistor, module. Max voltage: 880VCEO, 1000VCBO. Max current: 75Amp. Dissipation: 400 watt. P/N: MG75M2YK1. Learn More

Transistor, NPN. Max voltage: 160V. Max current: 1.5Amp. Dissipation: 1 watt. Package: TO-202. P/N: 2SC3117. Application: Switching. Note: Epitaxial silicon planar. Learn More

Transistor, PNP. Voltage: -160VCEO, -180VCBO. Current: 1.5Amp. Dissipation: 1 watt. Storage temperature: -55 to 150 Deg C. Package: TO-126. Note: Silicon. epitaxial planar. Learn More

Transistor, NPN. Max voltage: 30V. Max current: 20mA. Dissipation: 100mW. Package: TO-92 (C3193). P/N: 2SC381. Note: Silicon epitaxial planar. Learn More