Transistors

ST Microelectronics - 2N5179 Bipolar Transistor, NPN.

Collector-base Capacitance-Max :  1.0  pF

Collector Current-Max (IC):         0.05  A

Collector-emitter Voltage-Max: 12.0  V

Configuration    SINGLE

Highest Frequency Band:              ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code: TO-72

JESD-30 Code:   O-MBCY-W4

JESD-609 Code: e0

Number of Elements:     1.0

Number of Terminals:    4

Operating Temperature-Max:    200.0  Cel

Package Body Material: METAL

Package Shape: ROUND

Package Style:   CYLINDRICAL

Polarity/Channel Type:  NPN

Power Dissipation-Max (Abs):    0.2  W

Terminal Finish: Tin/Lead (Sn/Pb)

Terminal Form: WIRE

Terminal Position:  BOTTOM

Transistor Application: VHF/UHF AMPLIFIER

Transistor Element Material: SILICON

Transition Frequency-Nom (fT): 1400.0  MHz

Additional Feature:  LOW NOIS

Note: Blue, Black or Green test dots.

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ST MICROELECTRONICS - TIP115 - Transistor, PNP.

Voltage: 60V.

Current: 2Amp.

Dissipation: 50 watt.

Operating temperature: -65 to 150 deg C.

Package: TO-220.

Note: Silicon darlington.

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Transistor. NPN. Voltage: 80V. Current: 1Amp. Dissipation: 30 watt. Operating temperature: -65 to 150 Deg C. Package: TO-225AA. Note: Silicon. Learn More

Transistor, NPN. Voltage: 300VCEO, 600VCBO. Current: 8 Amp. Dissipation: 125 watt. Operating temperature: -65 to 200 Deg C. Package: TO-3 steel. Note: Silicon. High voltage. Learn More

Transistor, NPN. Max voltage: 400VCEO, 850VCEV. Max current: 8 Amp. Dissipation: 125 watt. Package: TO-3 (TO-204AA) steel. P/N: 2N6545. Operating temperature: -65 to 200 Deg C. Note: Silicon, switchmode series. High Voltage. Learn More

Transistor, NPN. Voltage: 400VCEO, 1050 VCES. Current: 4Amp. Dissipation: 70 watt. Operating temperature: -65 to 150 Deg C. Package: TO-220-3 staggered leads. Used/Removed from equipment. Note: High Voltage. Fast Switching. Learn More

ST Microelectronics - TIP100 - Transistor, NPN.

Voltage: 60V.

Current: 8Amp.

Dissipation: 80 watt.

Operating Temperature: -65 to 150 deg C.

Package: TO-220.

Alternates: NTE TIP100

Note: Silicon Darlington.

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ST Microelectronics - MJE2955T - Transistor, PNP.

Voltage: 60VCEO, 70VCBO.

Current: 10Amp.

Dissipation: 75 watt.

Operating Temperature: -55 to 150 Deg C.

Package: TO-220.

Note: Silicon bipolar.

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Transistor, PNP. Max voltage: 40VCEO. Max current: 3Amp. Dissipation: 40 watt. Package: TO-220 manufactures formed leads. P/N: TIP32. Note: Silicon epitaxial. Learn More

Transistor, NPN. Max voltage: 40VCEO, 40VCBO. Max current: 3 Amp. Dissipation: 40 watt. Gain: 3MHz. Package: TO-220, formed manufactures leads. P/N: TIP31. Application: Medium power linear switching applications. Note: Epitaxial silicon. Junction temperature: 150 Deg C. Storage temperature: -65 to 150 Deg C. Learn More

15AMP 1000V High Power NPN Silicon TransistorsNew TO-218 Learn More

Transistor, NPN. Voltage: 30VCEO. Current: 30mA. Dissipation: 360mW, 350MHz. Package: TO-18 metal. Note: silicon. Learn More

ST MICROELECTRONICS - MJE181 Transistor, NPN.

Status: Discontinued

Voltage: 80V.

Current: 3 Amp.

Dissipation: 2.5 watt.

Package: TO-225AA.

Note Silicon.

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Transistor, N Channel mosfet. Max voltage: 650V. Max current: 5Amp. Dissipation: 96 watt. Package: Dpak. P/N: STD5NM60TA. Note: Mdmesh. RDS On: 1 Ohm. Learn More

Power MOSFET Transistors N-Ch 30 Volt 17 Amp Dpak Learn More

Power MOSFET Transistors N-Ch 30 Volt 80 Amp D2PAK Learn More

Transistor, N Channel MOSFET. Max voltage: 500V. Max current: 5.5Amp. Dissipation: 100 watt. Package: D2PAK SMD. P/N: STB5NC50T4. Note: RDS on: 1.3 Ohm. From T/R. Learn More

Transistor, NPN. Max voltage: 40VCEO, 65VCBO. Max current: 1.5 Amp. Package: TO-60 (M137) stud. P/N: 2N3375. Operating temperature: -65 to 150 Deg C. Note: Silicon. Epitaxial planar. RF & Microwave. UHF/VHF. Learn More

Transistor, NPN. Max voltage: 350V. Max current: 20 Amp. Dissipation: 175 watt. Package: TO-3. P/N: MJ10004. Application: High voltage, high speed, power switching in inductive circuits. Note: High voltage silicon darlington. Learn More

ST Microelectronics - BU406 Transistor, NPN.

Status: Discontinued

Max voltage: 200VCEO, 400VCBO.

Max current: 7 Amp.

Dissipation: 60 watt.

Package: TO-220-3.

Storage temperature: -65 to 150 Deg C.

Application: Horizontal deflection for monochrome TV.

Note: Silicon epitaxial planar.

Very high speed switching.

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Transistor, N Channel Mosfet. Max voltage: 600V. Max current: 3.3Amp. Dissipation: 80 watt. Package: TO-220 metal tab. New, tubed. P/N: STP3NB60. Note: Enhancement mode Power mesh. High voltage. RDS on: 3.6 Ohm. Learn More

Transistor, N Channel mosfet. Max voltage: 550V. Max current: 20Amp. Dissipation: 192 watt. Package: TO-220 metal tab. New. P/N: STP20NM50. Note: Zener protected super mesh. RDS On: 0.25 Ohm. Learn More

Transistor, P Channel mosfet. Max voltage: 55V. Max current: 80Amp. Dissipation: 300 watt. Package: TO-220 metal tab. New. P/N: STP80PF55. Note: Stripfet II. RDS On: 0.018 Ohm. Learn More

Transistor, N Channel mosfet. Max voltage: 600V. Max current: 7.2Amp. Dissipation: 125 watt Tc at 25 Deg C. Package: TO-220 metal tab. New. P/N: STP7NB60. Note: Enhancement mode powermesh. RDS on: 1.2 Ohm. Learn More