Transistors

IR - JANTXV2N6766 - Transistor, N-CH Mosfet.

Max voltage: 200V.

Max current: 30Amp.

Dissipation: 150 watt.

Package: TO-3.

Derate >25 degC: -55 to 150 Deg C.

Military/Aerospace 

 

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International Rectifier - IRFP064 Transistor, N-Channel Power MOSFET.

Voltage: 60V.

Current: 70 Amp.

Dissipation: 300 watt.

RDS on: 0.009 Ohm.

Operating temperature: -55 to 175 Deg C.

Package: TO-247AC.

Note: Hexfet.

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IR - G4BC30KD Transistor, IGBT.

Status: Discontinued

Insulated gate bipolar.

Max voltage: 600V.

Max current: 16Amp.

8-25 KHz

Package: TO-220.

Note: Ultra-fast soft recovery diode.

Genuine International Rectifier - New Old Stock - Difficult Transistor/IGBT to Find

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International Rectifier - IRG4BC20UD - Transistor, IGBT.

Max voltage: 600V.

Max current: 13Amp @ 25 Deg C, continuous.

Dissipation: 60W @ 25 Deg C, 24W @ 100 Deg C.

Package: TO-220.

Operating temperature: -55 to 150 Deg C.

Note: Ultra-Fast soft recovery.

Insulated gate bipolar transistor.

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Transistor, N Channel MOSFET. Max voltage: 400V. Max current: 0.4 Amp. Dissipation: 1 watt. Package: 4 Dip. P/N: IRFD310. Operating temperature: -55 to 150 Deg C. Note: Enhancement mode silicon gate. RDS on: 3.6 Ohm. Learn More

TO-3 steel NEW 94-0051 Hughes Aircraft Stamped 5727461-1

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Transistor, N Channel MOSFET. Max voltage: 70V. Max current: 12Amp. Dissipation: 79 watt. Package: TO-220. P/N: IRF533. Operating temperature: -55 to 175 Deg C. Note: Enhancement mode silicon gate. RDS on: 0.23 Ohm. Learn More

Transistor, P CH Mosfet. Max voltage: 60V. Max current: 5.1 Amp. Dissipation: 2.5 watt (PCB mount). Package: TO-252AA D Pak SMD. P/N: IRFR9014. Note: RDS On: 0.5 Ohm.

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IR - IRF340 Transistor, N CH Fet.

Voltage: 400V.

Current: 10Amp.

RDS on: 0.55 Ohm.

Dissipation: 125 watt.

Operating temperature: -55 to 150 deg C.

Package: TO-3 steel.

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Transistor, N Channel Mosfet. Max voltage: 20Vdss. Gate source +/-12V. Max current: 4.2A @ 125 Deg, 3.4A @ 70 Deg. Dissipation: 1.3W. Package: SMD SOT-23. P/N: IRLML2502TR. Note: RDS on: 0.045 Ohm. Learn More

Transistor, N Channel Mosfet. Max voltage: 20Vdss. Gate source +/-12V. Max current: 1.2A @ 125 Deg, 0.95A @ 70 Deg. Dissipation: 540mW. Package: SMD SOT-23. P/N: IRLML2402TR. Note: RDS on: 0.25 Ohm. Learn More

IR - IRF540N Transistor, N Channel MOSFET.

The IRF540 is an N-Channel Mosfet. This mosfet can drive loads upto 23A and can support peak current upto 110A. It also has a threshold voltage of 4V, which means it can easily driven by low voltages like 5V. Hence it is mostly used with Arduino and other microcontrollers for logic switching. Speed control of motors and Light dimmers are also possible with this Mosfet since it has good switching characteristics.

Status: Discontinued

Max voltage: 100V.

Max current: 28Amp.

Dissipation: 85 watt.

Package: TO-220.

Operating temperature: -55 to 175 Deg C.

Note: Low gate charge StripFet.

RDS on: 0.077 Ohm.

Alternates: RFP30N06, IRFZ44, 2N3055, IRF3205

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Transistor, N Channel mosfet. Max voltage: 350V. Max current: 4.5Amp. Dissipation: 75 watt. Package: TO-3 steel (TO-204AA). P/N: IRF333. Note: RDS(on) 1.5 Ohm. Learn More

IR - IRF530 Transistor, N Channel MOSFET.

Max voltage: 100V.

Max current: 14Amp.

Dissipation: 79 watt.

Package: TO-220.

Operating temperature: -55 to 175 Deg C.

Note: Enhancement mode silicon gate.

RDS on: 0.16 Ohm.

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Transistor, N Channel MOSFET. Max voltage: 100V. Max current: 1.3 Amp. Dissipation: 1.3 watt. Package: 4 Dip. P/N: IRFD123. Operating temperature: -55 to 175 Deg C. Note: Enhancement mode silicon gate. RDS on: VGS=10V, 0.27 Ohm. Learn More

Transistor, N Channel MOSFET. Max voltage: 100V. Max current: 12Amp. Dissipation: 79 watt. Package: TO-220. P/N: IRF532. Operating temperature: -55 to 175 Deg C. Note: Enhancement mode silicon gate. RDS on: 0.23 Ohm. Used/Removed from equipment. Learn More

Transistor, N-Channel MOSFET. Voltage: 250V. Current: 14Amp. Dissipation: 125 watt. Rds (on): 0.28 Ohm. Package: TO-220. Learn More

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Military Silicon NPN Transistor TO-3 steel new. 350V max breakdown voltage Colletor to Emitter, Base open. Manuf by IR for HP. Learn More

Transistor, P Channel mosfet. Voltage: 100V. Current: 1 Amp. Rds On: 0.6 Ohm. Package 4 Dip, maybe perfect pulls. Note: Rohs compliant. Learn More

Transistor, N-Channel power mosfet. Voltage: 400V. Current: 5.5 Amp. Dissipation: 75 watt. Rds (on): 1 Ohm. Operating temperature: -55 to 150 Deg C. Package: TO-3 (TO-204AA). Note: Military type JANTX. Learn More

International Rectifier - IR - IRF9521 Transistor, P Channel power FET.

Metal-Oxide Semiconductor

Max voltage: 60V.

Max current: 6Amp.

Operating Temp: 150 C

Package: TO-220AB.

Note: Enhancement mode vertical DMOS.

RDS on: 0.60 Ohm.

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Transistor, N Channel MOSFET. Max voltage: 500V. Max current: 2.5 Amp. Dissipation: 25 watt. Package: TO-205AF (formerly TO-39). P/N: JANTXV2N6802. Operating temperature: -55 to 150 Deg C. Note: Enhancemnet mode. RDS on 1.5 Ohm. Military - Aerospace JANTX type, NSN 5961-01-343-3642. High Voltage. Learn More

Transistor, N Channel mosfet. Max voltage: 200V. Max current: 2.25Amp. Package: TO-39 (TO-205AF). Derate >25 degC: Operating temperature: -55 to 175 Deg C. Military P/N: JANTX2N6784, NSN 5961-01-252-6143. Note: RDS on: 1.500 Ohm. Military packaged. Learn More