Transistors

MicroChip - Microsemi - APTM50HM38FG - 4 N-Channel Full-Bridge MOSFET Power Module

Trans MOSFET Array Dual N-CH 500V 90A 12-Pin Case SP6

MOSFET Type: FREDFET 7

Mount: Chassis Mount, Screw

Number of Contacts: 6

Continuous Drain Current: (ID) 90 A

Drain to Source Voltage: (Vdss) 500 V

Fall Time: 77 ns

Gate to Source Voltage (Vgs): 30 V

Input Capacitance: 1.2 nF

Operating Temperature: -40 C to 150 °C

Max Power Dissipation: 694 W

Number of Elements: 4

Power Dissipation: 694 W

Rds On Max: 45 mΩ

Rise Time: 35 ns

Turn-Off Delay Time: 87 ns

Turn-On Delay Time: 18 ns

Approximate Dimensions: See Attached Detailed Diagram

RoHS Compliant

Does not include mounting hardware.

Additional Information: https://www.microsemi.com/document-portal/doc_download/8189-aptm50hm38fg-datasheet

Applications: Welding converters, Switched Mode Power Supplies, Uninterruptible Power Supplies, Motor control

Note: Microsemi Corporation is a wholly owned subsidiary of Microchip Technology Inc.

 

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Powerex CM1000HA-25H Power Transistor Module IGBT, 1000 Amp 1200V. Single module.

Collector Emitter Breakdown Voltage: 1.2 kV

Collector Emitter Voltage (VCEO): 3.6 V

Element Configuration: Single

Input: Standard

Input Capacitance: 200 nF

Max Collector Current: 1 kA

Max Power Dissipation: 5.8 kW

Compliance: RoHS Compliant     

Applications: AC motor control. Motion/Servo Control. Uninterruptible power supplies, Welding power supplies. Laser power supplies. Module Case, With Hardware.

 

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Transistors, darlington. Single 100Amp 450V. Case: module. Learn More

Transistor, NPN. Max voltage: 15VCEO, 40VCBO. Max current: 300mA. Dissipation: 350mW. Package: TO-92 plastic. P/N: PN3646. Operating temperature: -55 to 150 Deg C. Note: Switching. Learn More

MPS6531 Transistor, NPN.

Voltage: 40VCEO, 60VCBO.

Current: 1Amp.

Dissipation: 625mW.

Operating temperature: -55 to 150 Deg C.

Package: TO-92, plastic.

Note: Silicon.

Unmarked device, guaranteed.

Lot of 10

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Transistor, NPN. Voltage: 60VCEO, 70VCBO. Current: 6 Amp. Dissipation: 30 watt. Operating temperature: -55 to 150 Deg C. House numbered: ERS263TJ. Package: TO-220. Note: Silicon darlington epitaxial planar. May replace: 2SD1190. Learn More

Transistor, NPN. Max voltage: 400VCEO, 500VCBO. Max current: 20 Amp. Dissipation: 114 watt. Package: TO-3 (TO-204) steel. P/N: GSRU20040. Note: Silicon, low frequency. Military. High Voltage. Learn More

2N5810 HOUSE - Transistor, NPN. Small Signal Transistor.

Max voltage: 25VCEO, 35VCBO.

Max current: 750mA.

Dissipation: 625mW.

Package: TO-92 Plastic. P

House# 180-1.

Operating/Storage Temperature: -55 to 150 Deg C.

Note: Silicon Planar Epitaxial.

Noew Old Stock

Package of 10.

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2N5770 Transistor, NPN.

Max voltage: 15VCEO, 30VCBO.

Max current: 50mA.

Dissipation: 350mW.

Package: TO-92.

Operating temperature: -55 to 150 Deg C.

Note: Silicon planar epitaxial.

Alternates: ECG108, SK3452

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2N5172 Transistor, NPN.

Max Voltage: 25V.

Collector Current: 500mA.

Dissipation: 625mW.

Package: TO-92.

Note: GP Amplifier.

Operating temperature: -55 to 150 Deg C.

Unmarked, red dot.

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2N5087 Amplifier Transistor, PNP silicon.

Low Power Low Noise General Purpose.

Max Voltage: 50V.

Max Current: 50mA.

Dissipation: 625mw.

Package: TO-92.

Marked: NP2N5087.

Alternates: BC322, KT3107J

 

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Transistor, PNP. Voltage: 40V. Current: 600mA. Dissipation: 625mW. Operating temperature: -55 to 150 Deg C. House numbered 010-012. Package: TO-92, plastic. Note: Silicon. Package of 25. Learn More

Transistor, NPN. Max voltage: 400V. Max current: 3 Amp. Dissipation: 40 watt. Package: TO-220. P/N: UMT1204. Note: 5Amp peak, 1Amp continuous. Operating and storage temperature -65 Deg to 150DegC. Silicon. Learn More

Transistor. Military. Case: TO-3 steel. No other information available. Learn More

Tung Sol - TS604 Vinatge Transistor, Germanium PNP.

Small Signal Transistor

Status: Discontinued

Absolute Max. Power Diss. (W): 200m

h(fe) Min. SS Current Gain.: 60

I(C) Abs.(A) Collector Current: 400m

@I(C) (A) (Test Condition): 10m

I(CBO) Max. (A): 20u

Package: TO-9

V(BR)CBO (V): 20

V(BR)CEO (V): 18

@V(CE) (V) (Test Condition): 1.0

Max voltage: 18V.

Max current: 400ma, 200mw.

Package: TO-9 (TO-5 Long Leads). 

Application: Rare: Vintage TV Transistor 

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MARKED: VX UNITRODE O 2L, on top, UPT1025 on side - very mysterious, don't ya think? Si NPN Power BJT, V(BR)CEO (V)=100, V(BR)CBO (V)=150, I(C) Abs.(A) Collector Current=15, Absolute Max. Power Diss. (W)=30,I(CBO) Max. (A)=10u, h(FE) Min. Static Current Gain=40, @I(C) (A) (Test Condition)=5.0, @V(CE) (V) (Test Condition)=5.0, f(T) Min. (Hz) Transition Freq=50M, t(on) Max. (s) Turn-On Time=450n, t(off) Max. (s) Turn-Off Time=350n Obsolete TO-66 gold Learn More

Toshiba - MG300M1UK1 Transistor, IGBT.

Max voltage: 1000V (1KV).

Max current: 300Amp.

Package: Module.

Note: Used/Removed from equipment.

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Toshiba - MG25N2CK1 Transistors, IGBT.

25Amp 1100V.

Darlington half bridge power module.

Hardware not included.

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Toshiba - 2SD822 - Transistor, NPN.

Max voltage: 600VCEO, 1500VCBO.

Max current: 7Amp.

Dissipation: 50 watt.

Package: TO-3.

Note: Silicon.

High switching speed.

High Voltage.

Genuine Toshiba - New Old Stock - Rare

Alternates: NTE238, ECG165, SK2SD822.

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Transistor, NPN. Max voltage: 600VCEO, 1500VCBO. Max current: 2.5Amp. Dissipation: 50 watt. Package: TO-3. P/N: 2SD818. Note: Silicon. High switching speed. High Voltage. Learn More

Toshiba - 2SD633 Transistor, Silicon NPN.

Max voltage: 100V.

Max current: 7 Amp.

Dissipation: 40 watt.

Package: TO-220.

Note: Triple diffused type (high power switching, hammer drive, pulse motor drive applications).

Compliment: 2SB673

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"These transistors are encapsulated in a plastic compound specifically designed for this purpose, using a highly mechanized process developed by Texas Instruments. The case will withstand soldering temperatures without deformation, stable under high humidity. MIL-STD-202C m106B. The transistors are insensitive to light !" PNP 15V 500mW 1.6GHz, 2.5PF. Package: TO-92. Learn More

Transistor, N Channel FET. Dual monolithic. Max Voltage: 50V. Collector current: 50mA. Dissipation: 250mW one side, 500mW both sides. Package: TO-71-6 long gold leads. P/N: 2N5197 Learn More

TO-92 NEW TAPED MOTOROLA Learn More